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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
FEATURES
* VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz * HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz
Noise Figure, NF (dB)
1.2
NE32984D
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
24
1.0 GA 0.8
21
* LG 0.20 m, WG = 200 m * LOW COST METAL CERAMIC PACKAGE * TAPE & REEL PACKAGING OPTION AVAILABLE
18
0.6
15
DESCRIPTION
The NE32984D is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
0.4 NF 0.2
12
9
0 2 4 6 8 10 20 30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(TA = 25C)
PART NUMBER
PACKAGE OUTLINE SYMBOLS NF1 GA1 IDSS VP gm IGSO RTH (CH-A) RTH (CH-C) PARAMETERS AND CONDITIONS Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V,VGS = 0 V Pinch-off Voltage, VDS = 2 V, IDS = 100 A Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3 V Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case) UNITS dB dB mA V mS A C/W C/W 11.0 20 -2.0 45 MIN
NE32984D
84D TYP 0.40 12.5 60 -0.7 60 0.5 750 350 10.0 90 -0.2 MAX 0.50
Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
Associated Gain, GA (dB)
NE32984D ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGS IDS IGRF TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA A C C mW RATINGS 4.0 -3.0 IDSS 100 150 -65 to +150 165
NOISE PARAMETERS
VDS = 2 V, ID = 10 mA FREQ. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFMIN. (dB) 0.29 0.30 0.31 0.34 0.37 0.40 0.49 0.63 0.81 GA (dB) 20.0 18.3 16.5 15.0 13.6 12.5 12.0 11.8 11.5 MAG 0.85 0.75 0.68 0.61 0.56 0.52 0.47 0.40 0.31 opt ANG 20 41 63 86 111 137 164 -168 -139 Rn/50 0.30 0.28 0.20 0.13 0.09 0.05 0.04 0.04 0.07
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
(TA = 25C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
200
Total Power Dissipation, PT (mW)
80
150
Drain Current, ID (mA)
VGS = 0 V 60 -0.2 V 40 -0.4 V 20
100
50
-0.6 V -0.8 V
0
50
100
150
200
0
1.5
3.0
Ambient Temperature, TA (C)
Drain to Source Voltage, VDS (V)
MAXIMUM STABLE GAIN AND FORWARD INSERTION GAIN vs. FREQUENCY
24 VDS = 2 V ID = 10 mA 20 MSG
NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHZ GA 14 13
Maximum Stable Gain, MSG (db) Forward Insertion Gain, IS21S I2 (db)
12 2.0 1.5 1.0 0.5 NF 11 10
16 IS21SI 2 12
8
4 1 2 4 6 8 10 14 20 30
0
10
20
30
Frequency, f (GHz)
Drain Current, ID (mA)
Associated Gain, GA (dB)
Noise Figure, NF (dB)
NE32984D TYPICAL SCATTERING PARAMETERS (TA = 25C)
NE32984D VDS = 2 V, ID = 10 mA
FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 MAG .984 .960 .919 .868 .816 .786 .759 .736 .689 .659 .621 .590 .554 .522 .491 .461 .452 S11 ANG -26.4 -39.3 -52.8 -64.5 -75.5 -85.7 -95.9 -106.3 -116.2 -125.6 -135.5 -146.3 -157.9 -171.0 173.0 153.2 129.4 MAG 4.583 4.480 4.332 4.141 3.923 3.786 3.659 3.547 3.375 3.264 3.217 3.186 3.172 3.180 3.220 3.303 3.367 S21 ANG 146.9 130.6 114.3 98.8 84.4 70.8 57.1 43.1 30.1 17.5 4.9 -8.0 -21.3 -35.2 -49.9 -65.6 -83.4 MAG .029 .041 .050 .057 .060 .064 .066 .068 .071 .074 .079 .085 .093 .104 .114 .124 .137 S12 ANG 66.4 55.9 47.9 38.5 31.2 26.0 21.7 18.2 16.0 13.2 11.4 7.3 2.0 -5.5 -12.6 -23.3 -36.4 MAG .549 .520 .481 .447 .418 .396 .382 .374 .368 .370 .374 .391 .406 .417 .432 .445 .453 S22 ANG -32.0 -47.8 -64.5 -81.9 -99.8 -116.7 -132.6 -147.8 -163.0 -178.3 167.4 155.0 143.2 132.1 119.7 106.3 91.0 .13 .22 .31 .45 .58 .63 .69 .75 .86 .91 .94 .92 .91 .86 .82 .78 .72 K MAG1 (dB) 22.0 20.4 19.4 18.6 18.2 17.7 17.4 17.2 16.8 16.4 16.1 15.7 15.3 14.9 14.5 14.3 13.9
Note: 1. Gain calculation:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE32984D OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 84D
1.78 0.2
S
1.78 0.2 D
L
S
G
0.5 0.1 (ALL LEADS)
1.0 MIN 0.2 (ALL LEADS)
1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right.
ORDERING INFORMATION
PART NUMBER NE32984D-S NE32984D-T1 NE32984D-SL AVAILABILITY Bulk up to 1K 1K/Reel Bulk up to 1K LEAD LENGTH 1.0 mm 1.0 mm 1.7 mm PACKAGE OUTLINE 84D 84D 84D-SL
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RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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